? 1998 ixys all rights reserved features ? international standard packages ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 100 v v gh(th) v ds = v gs , i d = 8 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 m a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 6m w pulse test, t 300 m s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 100 v v dgr t j = 25 c to 150 c; r gs = 1 m w 100 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 230 a i l(rms) terminal current limit 100 a i dm t c = 25 c, pulse width limited by t jm 920 a i ar t c = 25 c 150 a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ m s, v dd v dss , 5 v/ns t j 150 c, r g = 2 w p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr 98548a (9/98) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source advanced technical information ixfn 230n10 v dss = 100 v i d25 = 230 a r ds(on) = 6 m w t rr < 250 ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfn 230n10 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 60a, pulse test 80 120 s c iss 21000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 5700 pf c rss 1500 pf t d(on) 60 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 90 ns t d(off) r g = 1 w (external), 150 ns t f 55 ns q g(on) 690 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 150 nc q gd 370 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 230 a i sm repetitive; 920 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, 1.2 v pulse test, t 300 m s, duty cycle d 2 % t rr i f = 50a, -di/dt = 100 a/ m s, v r = 100 v t j =25 c 250 ns q rm t j =25 c 1.2 m c i rm 9a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
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